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| DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. 1 2.0 0.2 2. PACKAGE DIMENSIONS (Unit: mm) 0 FEATURES * * Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz Gate Width: Wg = 280 Pm 0. 2 ORDERING INFORMATION PART NUMBER NE434S01-T1 NE434S01-T1B SUPPLYING FORM Tape & reel 1000 pcs./reel Tape & reel 4000 pcs./reel MARKING E 4 3 0.65 TYP. 1.9 0.2 1.6 1. 2. 3. 4. Source Drain Source Gate Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot Tch Tstg 4.0 -3.0 IDSS 300 125 -65 to +125 V V mA mW qC qC 0.125 0.05 0.4 MAX. 4.0 0.2 RECOMMENDED OPERATING CONDITION (TA = 25 C) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 15 MAX. 2.5 20 0 Unit V mA dBm Document No. P11344EJ3V0DS00 (3rd edition) Date Published October 1996 P Printed in Japan (c) 1.5 MAX. ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) 2.0 0.2 0.5 TYP. 2 E 1996 NE434S01 ELECTRO-OPTICAL CHARACTERISTICS (TA = 25 qC) PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain SYMBOL ISGO IDSS VGS(off) gm NF Ga 13.0 20 0.2 70 MIN. TYP. 0.5 80 0.9 85 0.35 15.5 0.45 MAX. 10 150 2.5 UNIT TEST CONDITIONS VGS = 3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 100 PA VDS = 2 V, ID = 14 mA VDS = 2 V, ID = 15 mA, f = 4 GHz PA mA V mS dB dB 2 NE434S01 TYPICAL CHARACTERISTICS (TA = 25 qC) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 500 100 Ptot - Total Power Dissipation - mW 400 ID - Drain Current - mA 80 -0.2 V 60 -0.4 V VGS = 0 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 300 200 40 100 20 -0.6 V 0 50 100 150 200 250 0 1 2 3 4 5 TA - Ambient Temperature - C VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 100 MSG. - Maximum Stable Gain - dB MAG. - Maximum Available Gain - dB 2 |S21S| - Forward Insertion Gain - dB VDS = 2 V 80 ID - Drain Current - mA 24 MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY VDS = 2 V ID = 15 mA 20 MSG. 60 16 |S21S|2 MAG. 40 12 20 8 0 -2.0 -1.0 VGS - Gate to Source Voltage - V 0 4 1 2 4 6 8 10 14 20 30 f - Frequency - GHz Gain Calculations MSG. = ~S21~ ~S12~ K= 1 + ~'~ ~S11~ ~S22~ 2 2 2 2~S12~~S21~ MAG. = ~S21~ 2 (K r--K 1) ~S12~ ' = S11S22 S21S12 3 NE434S01 S-PARAMETERS VDS = 2 V, ID = 15 mA START 2 Ghz, STOP 18 Ghz, STEP 500 Mhz Marker 1: 4 GHz 2: 8 GHz 3: 12 GHz 4: 16 GHz 5: 18 GHz S11 1.0 0.5 4 3 1 180 5 4 5 2.0 +135 +45 S12 +90 0 2 2 3 0 -0.5 1 -1.0 -2.0 -135 -45 Rmax. = 1 -90 Rmax. = 0.25 S21 +90 0.5 +135 1 2 180 5 4 0 3 0 +45 S22 1.0 2.0 5 4 3 2 1 -135 -45 -0.5 -1.0 -2.0 -90 Rmax. = 1.0 Rmax. = 1 4 NE434S01 S-Parameters MAG. AND ANG. VDS = 2 V, ID = 15 mA FREQUENCY MHz 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 MAG. .998 .927 .860 .829 .802 .716 .659 .601 .592 .550 .514 .488 .464 .463 .468 .472 .472 .476 .476 .488 .518 .552 .593 .635 .661 .688 .707 .719 .730 .752 .771 .803 .817 S11 ANG. (deg.) -41.7 -47.5 -61.3 -69.9 -79.2 -87.5 -93.9 -99.7 -108.5 -118.5 -130.2 -144.5 -158.9 -171.7 176.6 166.4 156.2 147.0 137.8 127.7 118.1 109.6 101.9 95.2 90.1 86.1 82.2 79.7 76.1 71.3 65.5 60.4 55.7 7.162 6.856 6.603 6.305 6.033 5.687 5.415 5.184 5.050 4.912 4.774 4.600 4.401 4.187 3.997 3.812 3.628 3.477 3.351 3.251 3.150 3.036 2.875 2.714 2.546 2.418 2.327 2.240 2.168 2.100 2.021 1.930 1.814 MAG. S21 ANG. (deg.) 140.1 133.6 122.0 114.4 106.8 98.5 91.6 84.7 77.6 70.5 63.0 55.4 47.9 41.0 34.1 27.7 21.5 15.6 9.6 3.5 -2.9 -9.7 -16.4 -22.7 -28.1 -32.6 -37.0 -41.8 -46.8 -52.7 -58.4 -65.1 -70.5 .042 .050 .057 .064 .071 .075 .081 .085 .091 .096 .102 .107 .109 .113 .114 .118 .119 .122 .124 .125 .128 .130 .131 .129 .126 .124 .127 .126 .129 .131 .130 .134 .128 MAG. S12 ANG. (deg.) 68.4 65.9 57.5 54.1 49.6 45.8 41.1 38.9 35.2 30.8 27.3 22.0 18.6 14.9 11.5 7.7 4.7 1.0 -2.5 -5.8 -9.2 -12.9 -16.7 -21.2 -22.5 -24.9 -27.4 -28.8 -31.6 -33.2 -38.5 -42.2 -44.3 .415 .479 .423 .429 .426 .406 .394 .374 .340 .311 .279 .232 .189 .155 .134 .121 .111 .103 .098 .093 .105 .131 .177 .223 .259 .284 .316 .332 .352 .380 .398 .422 .445 MAG. S22 ANG. (deg.) -27.5 -35.8 -43.0 -47.9 -51.7 -56.2 -59.7 -63.3 -68.1 -73.0 -79.1 -87.5 -97.7 -109.3 -126.9 -142.8 -156.2 -170.1 174.4 157.9 137.6 121.0 107.0 97.8 91.0 87.0 86.0 83.3 81.7 77.4 72.4 66.5 62.9 5 NE434S01 AMP. PARAMETERS VDS = 2 V, ID = 15 mA FREQUENCY MHz 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 GUmax dB 41.82 26.36 23.09 21.91 20.95 19.00 17.88 16.89 16.47 15.83 15.26 14.68 14.08 13.59 13.19 12.78 12.34 11.99 11.66 11.46 11.37 11.30 11.19 11.14 10.92 10.82 10.80 10.67 10.60 10.74 10.78 11.05 10.92 15.01 14.21 13.37 12.86 12.36 12.06 11.98 11.92 11.79 11.70 11.29 11.17 11.30 11.20 11.55 GAmax dB |S21| dB 17.10 16.72 16.39 15.99 15.61 15.10 14.67 14.29 14.07 13.83 13.58 13.25 12.87 12.44 12.03 11.62 11.19 10.82 10.50 10.24 9.97 9.65 9.17 8.67 8.12 7.67 7.33 7.01 6.72 6.45 6.11 5.71 5.17 2 |S12| dB 2 K .10 .23 .39 .42 .45 .60 .69 .78 .79 .84 .87 .91 .96 .98 1.00 1.02 1.06 1.08 1.10 1.12 1.10 1.08 1.07 1.06 1.08 1.08 1.05 1.04 1.01 .98 .96 .89 .91 Delay ns .036 .036 .064 .042 .042 .046 .038 .038 .039 .040 .041 .043 .041 .039 .038 .036 .034 .033 .033 .034 .035 .038 .037 .035 .030 .025 .025 .027 .028 .033 .032 .037 .030 Mason's U dB G1 dB 23.90 8.50 5.83 5.04 4.47 3.12 G2 dB .82 1.13 .86 .88 .87 .78 .73 .65 .54 .44 .35 .24 .16 .11 .08 .06 .05 .05 .04 .04 .05 .08 .14 .22 .30 .37 .46 .51 .58 .68 .75 .85 .96 -27.61 -26.05 -24.82 -23.94 -22.95 -22.49 -21.87 -21.41 -20.78 -20.36 -19.85 -19.40 -19.24 -18.94 -18.84 -18.57 -18.48 -18.28 -18.14 -18.05 -17.83 -17.73 -17.63 -17.81 -17.97 -18.12 -17.94 -17.99 -17.76 -17.68 -17.72 -17.46 -17.88 27.689 25.567 27.520 25.660 25.850 24.669 23.510 23.291 23.059 22.736 21.540 20.889 19.984 19.642 20.331 20.980 21.543 21.748 20.156 19.965 21.257 20.523 21.974 22.748 25.818 27.860 2.47 1.94 1.87 1.56 1.33 1.18 1.05 1.05 1.08 1.09 1.09 1.12 1.12 1.18 1.36 1.58 1.88 2.25 2.50 2.79 3.00 3.15 3.30 3.62 3.92 4.49 4.78 6 NE434S01 Noise Parameters *opt. Freq (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 NFmin (dB) 0.32 0.35 0.40 0.46 0.56 0.67 0.80 0.94 1.10 Ga (dB) 16.5 15.5 14.2 13.1 12.0 10.9 9.9 8.9 8.0 MAG. 0.77 0.58 0.43 0.32 0.27 0.27 0.34 0.48 0.69 ANG. (deg.) 15 43 82 127 175 -139 -100 -70 -56 Rn/50 0.19 0.18 0.13 0.08 0.07 0.10 0.17 0.29 0.46 7 NE434S01 TYPICAL MOUNT PAD LAYOUT 2.4 mm TYP. 8 2.4 mm TYP. NE434S01 RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" (C10535E) Soldering process Infrared ray reflow Soldering conditions Peak package's surface temperature: 230 qC or below, Reflow time: 30 seconds or below (210 qC or higher), Number of reflow process: 1, Exposure limit*: None Terminal temperature: 230 qC or below, Flow time: 10 seconds or below, Exposure limit*: None Symbol IR30-00 Partial heating method *: Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 qC and relative humidity at 65 % or less. Note: Do not apply more than a single process at once, except for "Partial heating method". PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. 9 NE434S01 [MEMO] 10 NE434S01 [MEMO] 11 NE434S01 Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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